NTE Electronics, Inc NTE2680
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- NTE2680
- NTE Electronics, Inc
- TRANS NPN 800V 8A TO3PIS
- Transistors - Bipolar (BJT) - Single
- NTE2680 Datasheet
- TO-3P-3 Full Pack
- Bag
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Lead free / RoHS Compliant - 9815
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
What is NTE2680
NTE Electronics, Inc Part Number NTE2680（Transistors - Bipolar (BJT) - Single）, developed and manufactured by NTE Electronics, Inc, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
NTE2680 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
NTE2680 Specifications
- Part NumberNTE2680
- CategoryTransistors - Bipolar (BJT) - Single
- ManufacturerNTE Electronics, Inc
- DescriptionTRANS NPN 800V 8A TO3PIS
- PackageBag
- Series-
- Operating Temperature150°C (TJ)
- Mounting TypeThrough Hole
- Package / CaseTO-3P-3 Full Pack
- Supplier Device PackageTO-3P(H)IS
- Power - Max45 W
- Transistor TypeNPN
- Current - Collector (Ic) (Max)8 A
- Voltage - Collector Emitter Breakdown (Max)800 V
- Vce Saturation (Max) @ Ib, Ic3V @ 1.25A, 5A
- Current - Collector Cutoff (Max)1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce7 @ 500mA, 5V
- Frequency - Transition-
Application of NTE2680
NTE2680 Datasheet
NTE2680 Datasheet , Bag,150°C (TJ),Through Hole,TO-3P-3 Full Pack,TO-3P(H)IS,45 W,NPN,8 A,800 V,3V @ 1.25A, 5A,1mA,7 @ 500mA, 5V
NTE2680 Classification
Transistors - Bipolar (BJT) - Single
FAQ about Transistors - Bipolar (BJT) - Single
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1. What is a bipolar transistor?
A bipolar transistor, or bipolar junction transistor (BJT), is an electronic device with three terminals, consisting of three semiconductors with different doping levels. It was successfully developed by William Shockley, John Bardeen and Walter Brattain of Bell Labs in 1947, marking the birth of semiconductor device technology.
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2. What is the difference between bipolar transistors and CMOS transistors?
The main differences between bipolar transistors and CMOS transistors are in working principles, structures, application scenarios, and power consumption.
Working principle
Bipolar transistor: Bipolar transistors have two types of carriers (holes and electrons) involved in conduction, and they are made of three parts of semiconductors with different doping levels. In bipolar transistors, the emitter emits free electrons, the collector receives holes, and the base controls the on and off of the current.
CMOS transistor: CMOS transistors have only one type of carrier (electrons or holes) involved in conduction, usually using a combination of P-type semiconductors and N-type semiconductors. In CMOS transistors, when the gate voltage is zero, the current does not flow. Only when the gate voltage reaches a certain value, the current will flow, which makes the CMOS transistor consume almost no power when static.
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3. What are the two types of BJT transistors?
There are two main types of BJT transistors: NPN and PNP.
NPN transistor
In an NPN transistor, current flows from the collector to the emitter. The base of an NPN transistor must be connected to a positive voltage for current to flow in. As the current flowing to the base increases, the transistor gradually turns on until the current is completely conducted from the collector to the emitter.
PNP Transistor
In a PNP transistor, the current flows from the emitter to the collector. Therefore, the base of the PNP transistor must be grounded. When the output current is small and the base is negative relative to the emitter, the transistor will turn on and a larger current will flow from the emitter to the collector. Basically, if the base and collector are negative relative to the emitter, the PNP transistor will conduct current from the emitter to the collector.
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