NTE Electronics, Inc TIP35E
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- TIP35E
- NTE Electronics, Inc
- T-NPN SI- PWR AMP
- Transistors - Bipolar (BJT) - Single
- TIP35E Datasheet
- TO-247-3
- Bag
-
Lead free / RoHS Compliant - 3160
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
What is TIP35E
NTE Electronics, Inc Part Number TIP35E（Transistors - Bipolar (BJT) - Single）, developed and manufactured by NTE Electronics, Inc, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
TIP35E is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
TIP35E Specifications
- Part NumberTIP35E
- CategoryTransistors - Bipolar (BJT) - Single
- ManufacturerNTE Electronics, Inc
- DescriptionT-NPN SI- PWR AMP
- PackageBag
- Series-
- Operating Temperature-65°C ~ 150°C (TJ)
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Supplier Device PackageTO-247
- Power - Max125 W
- Transistor TypeNPN
- Current - Collector (Ic) (Max)25 A
- Voltage - Collector Emitter Breakdown (Max)140 V
- Vce Saturation (Max) @ Ib, Ic5V @ 6.25A, 25A
- Current - Collector Cutoff (Max)1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1.5A, 4V
- Frequency - Transition3MHz
Application of TIP35E
TIP35E Datasheet
TIP35E Datasheet , Bag,-65°C ~ 150°C (TJ),Through Hole,TO-247-3,TO-247,125 W,NPN,25 A,140 V,5V @ 6.25A, 25A,1mA,25 @ 1.5A, 4V,3MHz
TIP35E Classification
Transistors - Bipolar (BJT) - Single
FAQ about Transistors - Bipolar (BJT) - Single
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1. What is a bipolar transistor?
A bipolar transistor, or bipolar junction transistor (BJT), is an electronic device with three terminals, consisting of three semiconductors with different doping levels. It was successfully developed by William Shockley, John Bardeen and Walter Brattain of Bell Labs in 1947, marking the birth of semiconductor device technology.
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2. Are bipolar transistors still in use?
Bipolar transistors are still in use and play an important role in many fields. Bipolar transistors, the full name of which is bipolar junction transistor (BJT), commonly known as triode, are electronic devices with three terminals, made of three parts of semiconductors with different doping levels. Its working principle involves the flow of two carriers, electrons and holes, so it is called bipolar.
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3. What are the two types of BJT transistors?
There are two main types of BJT transistors: NPN and PNP.
NPN transistor
In an NPN transistor, current flows from the collector to the emitter. The base of an NPN transistor must be connected to a positive voltage for current to flow in. As the current flowing to the base increases, the transistor gradually turns on until the current is completely conducted from the collector to the emitter.
PNP Transistor
In a PNP transistor, the current flows from the emitter to the collector. Therefore, the base of the PNP transistor must be grounded. When the output current is small and the base is negative relative to the emitter, the transistor will turn on and a larger current will flow from the emitter to the collector. Basically, if the base and collector are negative relative to the emitter, the PNP transistor will conduct current from the emitter to the collector.
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