NTE2701

NTE Electronics, Inc NTE2701

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  • NTE2701
  • NTE Electronics, Inc
  • T-PNP SIL 100V 15A TO220F
  • Transistors - Bipolar (BJT) - Single
  • NTE2701 Datasheet
  • TO-220-3
  • Bag
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 17725
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
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What is NTE2701

NTE Electronics, Inc Part Number NTE2701（Transistors - Bipolar (BJT) - Single）, developed and manufactured by NTE Electronics, Inc, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.

NTE2701 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.

NTE2701 Specifications

  • Part NumberNTE2701
  • CategoryTransistors - Bipolar (BJT) - Single
  • ManufacturerNTE Electronics, Inc
  • DescriptionT-PNP SIL 100V 15A TO220F
  • PackageBag
  • Series-
  • Operating Temperature150°C (TJ)
  • Mounting TypeThrough Hole
  • Package / CaseTO-220-3
  • Supplier Device PackageTO-220
  • Power - Max2 W
  • Transistor TypePNP
  • Current - Collector (Ic) (Max)15 A
  • Voltage - Collector Emitter Breakdown (Max)60 V
  • Vce Saturation (Max) @ Ib, Ic500mV @ 600mA, 12A
  • Current - Collector Cutoff (Max)10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 3A, 2V
  • Frequency - Transition-

Application of NTE2701

Bipolar - Single as the main function of the amplifier and switching element. In amplifier applications, BJTS are capable of amplifying the current of the input signal to drive a larger load. In switching applications, the BJT can be used as a high-speed switch to turn the current path between the collector and the emitter on or off by controlling the base current. In addition, BJT can also be used to build oscillators, mixers and other circuits.

NTE2701 Datasheet

NTE2701 Datasheet , Bag,150°C (TJ),Through Hole,TO-220-3,TO-220,2 W,PNP,15 A,60 V,500mV @ 600mA, 12A,10µA (ICBO),150 @ 3A, 2V

NTE2701 Classification

Transistors - Bipolar (BJT) - Single

Bipolar (BJT) -Single refers to a single Bipolar Junction Transistor (BJT), which is a commonly used semiconductor device with two PN junctions, usually composed of an NPN or PNP structure. The BJT is capable of amplifying the current and regulating the current between the collector and emitter by controlling the base current. A single BJT is the basic building block of many electronic circuits and can be used for a variety of functions such as amplification, switching, and signal processing.

FAQ about Transistors - Bipolar (BJT) - Single

  • 1. Is BJT bipolar or unipolar?

    BJT (bipolar junction transistor) is bipolar. BJT (bipolar junction transistor) is composed of two N-type semiconductors sandwiched between a P-type semiconductor, with an emitter junction formed between the emitter and the base, and a collector junction formed between the collector and the base. When the power is turned on, the majority carriers (electrons) in the emitter and the majority carriers (holes) in the base diffuse with each other, forming a current amplification effect.
    The working principle of BJT is to achieve current amplification through the control of two PN junctions (emitter junction and collector junction). When the emitter junction is forward biased, electrons are injected from the emitter region into the base region; when the collector junction is reverse biased, electrons are injected from the base region into the collector region. Because the base region is very thin and the impurity content is strictly controlled, most electrons can enter the collector region through the collector junction to form the collector current Ic, and only a small number of electrons recombine with holes in the base region to form the base current Ib. Therefore, by controlling the base current Ib, the collector current Ic can be amplified to achieve current amplification.

  • 2. Is PNP transistor bipolar?

    PNP transistor is a bipolar transistor. PNP transistor is a bipolar transistor used in electronic circuits to amplify, switch and control current. Its name "PNP" represents the three different semiconductor regions in its structure: two positive poles (P type) and one negative pole (N type).

  • 3. What are the two types of BJT transistors?

    There are two main types of BJT transistors: NPN and PNP.
    NPN transistor
    In an NPN transistor, current flows from the collector to the emitter. The base of an NPN transistor must be connected to a positive voltage for current to flow in. As the current flowing to the base increases, the transistor gradually turns on until the current is completely conducted from the collector to the emitter.
    PNP Transistor
    In a PNP transistor, the current flows from the emitter to the collector. Therefore, the base of the PNP transistor must be grounded. When the output current is small and the base is negative relative to the emitter, the transistor will turn on and a larger current will flow from the emitter to the collector. Basically, if the base and collector are negative relative to the emitter, the PNP transistor will conduct current from the emitter to the collector.

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Do you have any questions about NTE2701 ?
Feel free to contact us:

+86-755-28503874
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
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NTE Electronics, Inc
NTE Electronics, Inc
NTE Electronics is a high-tech enterprise dedicated to the research and development, manufacturing, and sales of electronic components.
In 1979, NTE Electronics was founded in New Jersey, USA. The company's products mainly include integrated...
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