NXP USA Inc. PESD12VS4UD,115
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- PESD12VS4UD,115
- NXP USA Inc.
- TVS DIODE 12VWM 24VC 6TSOP
- TVS - Diodes
- PESD12VS4UD,115 Datasheet
- SC-74, SOT-457
- SC-74, SOT-457
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What is PESD12VS4UD,115
NXP USA Inc. Part Number PESD12VS4UD,115（TVS - Diodes）, developed and manufactured by NXP USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
PESD12VS4UD,115 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
PESD12VS4UD,115 Specifications
- Part NumberPESD12VS4UD,115
- CategoryTVS - Diodes
- ManufacturerNXP USA Inc.
- DescriptionTVS DIODE 12VWM 24VC 6TSOP
- PackageSC-74, SOT-457
- Series-
- TypeZener
- Operating Temperature-65°C ~ 150°C (TA)
- Mounting TypeSurface Mount
- Package / CaseSC-74, SOT-457
- Supplier Device Package6-TSOP
- ApplicationsGeneral Purpose
- Unidirectional Channels4
- Voltage - Reverse Standoff (Typ)12V (Max)
- Voltage - Breakdown (Min)12.5V
- Voltage - Clamping (Max) @ Ipp24V
- Current - Peak Pulse (10/1000µs)10A (8/20µs)
- Power - Peak Pulse200W
- Power Line ProtectionNo
- Capacitance @ Frequency73pF @ 1MHz
Application of PESD12VS4UD,115
PESD12VS4UD,115 Datasheet
PESD12VS4UD,115 Datasheet , SC-74, SOT-457,Zener,-65°C ~ 150°C (TA),Surface Mount,SC-74, SOT-457,6-TSOP,General Purpose,4,12V (Max),12.5V,24V,10A (8/20µs),200W,No,73pF @ 1MHz
PESD12VS4UD,115 Classification
TVS - Diodes
FAQ about TVS - Diodes
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1. What is the difference between TVS and ordinary diodes?
The main difference between TVS diodes and ordinary diodes lies in their working principle, application scenarios and characteristics.
Working principle and application scenarios
TVS diode: TVS diode (Transil Voltage Suppressor) is a high-efficiency protection device that stabilizes and suppresses overvoltage based on the breakdown effect of PN junction. When the voltage exceeds its breakdown voltage, the TVS diode will conduct quickly and release the overvoltage to ground, thus protecting the precision components in the circuit from damage by surge pulses. TVS diodes are widely used in computer systems, communication equipment, automotive electronics, household appliances and other fields to suppress transient overvoltage and electromagnetic interference.
Ordinary Diode: The main function of an ordinary diode is unidirectional conductivity, allowing current to pass in one direction and blocking reverse current. They are widely used in rectification, signal modulation, power management and other scenarios.
Feature comparison
Current size: The Zener breakdown current of TVS diodes is small, usually around 1mA, while the breakdown current of ordinary diodes is larger.
Classification: TVS diodes are divided into unipolar and bipolar according to polarity; ordinary diodes are divided into low-voltage and high-voltage types according to the level of voltage regulation, as well as N-type and P-type materials.
Voltage regulation characteristics: The voltage characteristics of TVS diodes are nonlinear, the resistance before breakdown is high, and the voltage remains constant after breakdown; the voltage of ordinary diodes remains constant at the critical reverse breakdown point, realizing the voltage stabilization function.
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2. TVS is the abbreviation of diode. What does it mean?
TVS is the abbreviation of Transient Voltage Suppressor, also known as Transient Voltage Suppression Diode.
How TVS diodes work
TVS diodes work using the avalanche breakdown effect. When the TVS diode receives a reverse voltage, the depletion layer near its PN junction will increase, causing the electric field intensity to increase, which in turn triggers the avalanche effect and causes the reverse current to increase sharply. Unlike ordinary diodes, TVS diodes can recover after avalanche breakdown and continue to work normally. -
3. What is the difference between TVS diodes and MOVs?
The main differences between TVS diodes and MOV varistors lie in their working principles, application scenarios and performance parameters.
Working principle
TVS diode: TVS diode (Transient Voltage Suppressor) is a semiconductor device with a high-sensitivity N/P junction. When the reverse voltage exceeds its breakdown voltage, the TVS diode will conduct quickly and introduce the surge current into the ground, thereby protecting the subsequent circuit. The response speed of TVS diodes is very fast, usually within nanoseconds.
MOV varistor: MOV varistor (Metal-Oxide Varistor) is a multi-layer varistor made of multi-layer zinc oxide material. When the voltage exceeds its varistor voltage, the MOV will conduct, absorb the surge energy, and clamp the voltage within a safe range. MOV has a long response time, usually completing the response within microseconds.
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