NXP USA Inc. PESD5V0L6US,118
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- PESD5V0L6US,118
- NXP USA Inc.
- TVS DIODE 5VWM 15VC 8SOIC
- TVS - Diodes
- PESD5V0L6US,118 Datasheet
- 8-SOIC (0.154", 3.90mm Width)
- 8-SOIC (0.154", 3.90mm Width)
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Lead free / RoHS Compliant - 17688
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What is PESD5V0L6US,118
NXP USA Inc. Part Number PESD5V0L6US,118（TVS - Diodes）, developed and manufactured by NXP USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
PESD5V0L6US,118 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
PESD5V0L6US,118 Specifications
- Part NumberPESD5V0L6US,118
- CategoryTVS - Diodes
- ManufacturerNXP USA Inc.
- DescriptionTVS DIODE 5VWM 15VC 8SOIC
- Package8-SOIC (0.154", 3.90mm Width)
- Series-
- TypeZener
- Operating Temperature-65°C ~ 150°C (TA)
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package8-SO
- ApplicationsGeneral Purpose
- Unidirectional Channels6
- Voltage - Reverse Standoff (Typ)5V (Max)
- Voltage - Breakdown (Min)6.4V
- Voltage - Clamping (Max) @ Ipp15V
- Current - Peak Pulse (10/1000µs)2.5A (8/20µs)
- Power - Peak Pulse35W
- Power Line ProtectionNo
- Capacitance @ Frequency16pF @ 1MHz
Application of PESD5V0L6US,118
PESD5V0L6US,118 Datasheet
PESD5V0L6US,118 Datasheet , 8-SOIC (0.154", 3.90mm Width),Zener,-65°C ~ 150°C (TA),Surface Mount,8-SOIC (0.154", 3.90mm Width),8-SO,General Purpose,6,5V (Max),6.4V,15V,2.5A (8/20µs),35W,No,16pF @ 1MHz
PESD5V0L6US,118 Classification
TVS - Diodes
FAQ about TVS - Diodes
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1. What does a TVS diode do?
The main function of TVS diodes (Transient Voltage Suppression Diodes) is to protect electronic equipment from voltage spikes and surge voltages. When the two poles of the TVS diode are impacted by reverse transient high energy, it can change the high impedance between the two poles into low impedance within 10^-12 seconds, while absorbing surge power up to several kilowatts, causing the gap between the two poles to The voltage is clamped to a safe value, thereby effectively protecting precision components in electronic circuits.
The specific working principle of TVS diodes is as follows:
Absorb surge power: TVS diodes can, under reverse application conditions, when subjected to a high-energy large pulse, their working impedance immediately drops to a lower conduction state, allowing large current to pass while clamping the voltage at predetermined level. Its response time is only 10^-12 seconds.
Protection circuit: TVS diodes are used in parallel with the protected circuit. When the circuit is working normally, the TVS diode is in a high impedance state and does not affect the circuit; when there is a surge voltage impact, the TVS diode conducts quickly, absorbs the surge energy, and protects the subsequent circuit.
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2. How do TVS diodes fail?
The failure modes of TVS diodes mainly include short circuit failure, open circuit failure and performance degradation. These failure modes can have a serious impact on the normal operation and protection functions of the circuit.
short circuit fault
Short circuit failure is one of the most common failure modes of TVS diodes. When a TVS diode is short-circuited, it changes to a low-impedance state, allowing a large amount of current to pass through, which may cause the circuit to not function properly and may even damage other circuit components. Causes of short circuit faults include:
Thermal breakdown: In a high temperature environment or when subjected to excessive transient energy impact, the PN junction of the TVS diode may undergo thermal breakdown, resulting in a short circuit.
Over-electrical stress: When the transient pulse energy exceeds the energy that the TVS can withstand, it will cause over-electrical stress damage and even directly cause burnout.
Manufacturing process issues: Such as chip bonding interface voids, mesa defects, strong accumulation layer or strong inversion layer on the surface, chip cracks, uneven impurity diffusion, etc., which may cause short circuit failures of TVS diodes during manufacturing or use.
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3. How fast are TVS diodes?
TVS diodes are very fast and can respond within 10^-12 seconds (i.e. 1 nanosecond). When the two poles of the TVS diode are impacted by reverse transient high energy, it can change the high impedance between its two poles into low impedance in a very short time, while absorbing surge power up to several kilowatts, reducing the voltage between the two poles. It is clamped to a predetermined safe value, thereby effectively protecting precision components in electronic circuits from damage by various surge pulses.
This fast response characteristic of TVS diodes allows them to play an important role in various electronic systems, especially where precision electronic components need to be protected from transient voltage impacts. For example, in the fields of computer systems, communication equipment, automotive electronics, household appliances, etc., TVS diodes are widely used to protect circuits from electrostatic discharge, surge voltage, and electromagnetic interference.
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