SCTH40N120G2V7AG

STMicroelectronics SCTH40N120G2V7AG

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  • SCTH40N120G2V7AG
  • STMicroelectronics
  • SICFET N-CH 650V 33A H2PAK-7
  • Transistors - FETs, MOSFETs - Single
  • SCTH40N120G2V7AG Datasheet
  • TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 29910
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SCTH40N120G2V7AG
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
STMicroelectronics
Description
SICFET N-CH 650V 33A H2PAK-7
Package
Tube
Series
Automotive, AEC-Q101
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device Package
H2PAK-7
Technology
SiCFET (Silicon Carbide)
Power Dissipation (Max)
250W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Rds On (Max) @ Id, Vgs
105mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
1230 pF @ 800 V
Vgs (Max)
+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)
18V
Package_case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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STMicroelectronics
STMicroelectronics
STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual ...
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