ON Semiconductor SFT1202-TL-E
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- SFT1202-TL-E
- ON Semiconductor
- TRANS NPN 150V 2A TPFA
- Transistors - Bipolar (BJT) - Single
- SFT1202-TL-E Datasheet
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Tape & Reel (TR)
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Lead free / RoHS Compliant - 6498
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What is SFT1202-TL-E
ON Semiconductor Part Number SFT1202-TL-E（Transistors - Bipolar (BJT) - Single）, developed and manufactured by ON Semiconductor, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
SFT1202-TL-E is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
SFT1202-TL-E Specifications
- Part NumberSFT1202-TL-E
- CategoryTransistors - Bipolar (BJT) - Single
- ManufacturerON Semiconductor
- DescriptionTRANS NPN 150V 2A TPFA
- PackageTape & Reel (TR)
- Series-
- Operating Temperature150°C (TJ)
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device PackageTP-FA
- Power - Max1 W
- Transistor TypeNPN
- Current - Collector (Ic) (Max)2 A
- Voltage - Collector Emitter Breakdown (Max)150 V
- Vce Saturation (Max) @ Ib, Ic165mV @ 100mA, 1A
- Current - Collector Cutoff (Max)1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA, 5V
- Frequency - Transition140MHz
Application of SFT1202-TL-E
SFT1202-TL-E Datasheet
SFT1202-TL-E Datasheet , Tape & Reel (TR),150°C (TJ),Surface Mount,TO-252-3, DPak (2 Leads + Tab), SC-63,TP-FA,1 W,NPN,2 A,150 V,165mV @ 100mA, 1A,1µA (ICBO),200 @ 100mA, 5V,140MHz
SFT1202-TL-E Classification
Transistors - Bipolar (BJT) - Single
FAQ about Transistors - Bipolar (BJT) - Single
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1. What is a bipolar transistor?
A bipolar transistor, or bipolar junction transistor (BJT), is an electronic device with three terminals, consisting of three semiconductors with different doping levels. It was successfully developed by William Shockley, John Bardeen and Walter Brattain of Bell Labs in 1947, marking the birth of semiconductor device technology.
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2. Is BJT bipolar or unipolar?
BJT (bipolar junction transistor) is bipolar. BJT (bipolar junction transistor) is composed of two N-type semiconductors sandwiched between a P-type semiconductor, with an emitter junction formed between the emitter and the base, and a collector junction formed between the collector and the base. When the power is turned on, the majority carriers (electrons) in the emitter and the majority carriers (holes) in the base diffuse with each other, forming a current amplification effect.
The working principle of BJT is to achieve current amplification through the control of two PN junctions (emitter junction and collector junction). When the emitter junction is forward biased, electrons are injected from the emitter region into the base region; when the collector junction is reverse biased, electrons are injected from the base region into the collector region. Because the base region is very thin and the impurity content is strictly controlled, most electrons can enter the collector region through the collector junction to form the collector current Ic, and only a small number of electrons recombine with holes in the base region to form the base current Ib. Therefore, by controlling the base current Ib, the collector current Ic can be amplified to achieve current amplification. -
3. Are bipolar transistors still in use?
Bipolar transistors are still in use and play an important role in many fields. Bipolar transistors, the full name of which is bipolar junction transistor (BJT), commonly known as triode, are electronic devices with three terminals, made of three parts of semiconductors with different doping levels. Its working principle involves the flow of two carriers, electrons and holes, so it is called bipolar.
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