Vishay Siliconix SI1431DH-T1-GE3
- SI1431DH-T1-GE3
- Vishay Siliconix
- MOSFET P-CH 30V 1.7A SOT363
- Transistors - FETs, MOSFETs - Single
- SI1431DH-T1-GE3 Datasheet
- 6-TSSOP, SC-88, SOT-363
- 6-TSSOP, SC-88, SOT-363
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What is SI1431DH-T1-GE3
Vishay Siliconix Part Number SI1431DH-T1-GE3(Transistors - FETs, MOSFETs - Single), developed and manufactured by Vishay Siliconix, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
SI1431DH-T1-GE3 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
SI1431DH-T1-GE3 Specifications
- Part NumberSI1431DH-T1-GE3
- CategoryTransistors - FETs, MOSFETs - Single
- ManufacturerVishay Siliconix
- DescriptionMOSFET P-CH 30V 1.7A SOT363
- Package6-TSSOP, SC-88, SOT-363
- SeriesTrenchFET?
- Operating Temperature-55°C ~ 150°C (TJ)
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Supplier Device PackageSC-70-6 (SOT-363)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation (Max)950mW (Ta)
- FET TypeP-Channel
- Drain to Source Voltage (Vdss)30V
- Current - Continuous Drain (Id) @ 25°C1.7A (Ta)
- Rds On (Max) @ Id, Vgs200 mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs4nC @ 4.5V
- Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
- Vgs (Max)±20V
Application of SI1431DH-T1-GE3
SI1431DH-T1-GE3 Datasheet
SI1431DH-T1-GE3 Datasheet , 6-TSSOP, SC-88, SOT-363,TrenchFET?,-55°C ~ 150°C (TJ),Surface Mount,6-TSSOP, SC-88, SOT-363,SC-70-6 (SOT-363),MOSFET (Metal Oxide),950mW (Ta),P-Channel,30V,1.7A (Ta),200 mOhm @ 2A, 10V,3V @ 100µA,4nC @
SI1431DH-T1-GE3 Classification
Transistors - FETs, MOSFETs - Single
FAQ about Transistors - FETs, MOSFETs - Single
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1. How does a MOSFET work as an amplifier?
A MOSFET can change the resistance between the source and drain by adjusting the gate voltage, which in turn affects the current flowing through this path. This allows the input signal to be amplified.
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2. How to connect a MOSFET?
The source is usually connected to a lower potential (such as ground).
The drain is connected to the load or power supply.
The gate is connected to the control signal through an appropriate drive circuit.
Sometimes a small resistor is added between the gate and the source to prevent oscillation. -
3. Why use MOSFETs instead of transistors?
MOSFETs are superior to traditional BJT transistors in many applications due to their high input impedance, low power consumption, high speed, and easy integration.
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