Vishay Siliconix SI3460DDV-T1-GE3
- SI3460DDV-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 20V 7.9A 6TSOP
- Transistors - FETs, MOSFETs - Single
- SI3460DDV-T1-GE3 Datasheet
- SOT-23-6 Thin, TSOT-23-6
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 4217
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SI3460DDV-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 20V 7.9A 6TSOP |
Package Cut Tape (CT) |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package 6-TSOP |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1.7W (Ta), 2.7W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 20 V |
Current - Continuous Drain (Id) @ 25°C 7.9A (Tc) |
Rds On (Max) @ Id, Vgs 28mOhm @ 5.1A, 4.5V |
Vgs(th) (Max) @ Id 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 8 V |
Input Capacitance (Ciss) (Max) @ Vds 666 pF @ 10 V |
Vgs (Max) ±8V |
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V |
Package_case SOT-23-6 Thin, TSOT-23-6 |
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