SI3460DDV-T1-GE3

Vishay Siliconix SI3460DDV-T1-GE3

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  • SI3460DDV-T1-GE3
  • Vishay Siliconix
  • MOSFET N-CH 20V 7.9A 6TSOP
  • Transistors - FETs, MOSFETs - Single
  • SI3460DDV-T1-GE3 Datasheet
  • SOT-23-6 Thin, TSOT-23-6
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4217
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SI3460DDV-T1-GE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 20V 7.9A 6TSOP
Package
Cut Tape (CT)
Series
TrenchFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1.7W (Ta), 2.7W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
7.9A (Tc)
Rds On (Max) @ Id, Vgs
28mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds
666 pF @ 10 V
Vgs (Max)
±8V
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Package_case
SOT-23-6 Thin, TSOT-23-6

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Vishay Siliconix
Vishay Siliconix
In 1996, Vishay Siliconix became a part of Vishay. Vishay Siliconix is a company that manufactures semiconductor devices and integrated circuits.
Vishay Siliconix products mainly include high-performance power MOSFETs, insulated gate bipolar transistors, power...
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