Vishay Siliconix SI8821EDB-T2-E1
- SI8821EDB-T2-E1
- Vishay Siliconix
- MOSFET P-CH 30V 4MICROFOOT
- Transistors - FETs, MOSFETs - Single
- SI8821EDB-T2-E1 Datasheet
- 4-XFBGA, CSPBGA
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 2399
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SI8821EDB-T2-E1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET P-CH 30V 4MICROFOOT |
Package Cut Tape (CT) |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 4-XFBGA, CSPBGA |
Supplier Device Package 4-Microfoot |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 500mW (Ta) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta) |
Rds On (Max) @ Id, Vgs 135mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id 1.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 15 V |
Vgs (Max) ±12V |
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V |
Package_case 4-XFBGA, CSPBGA |
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