Toshiba Semiconductor and Storage SSM6J507NU,LF
- SSM6J507NU,LF
- Toshiba Semiconductor and Storage
- MOSFET P-CH 30V 10A 6UDFNB
- Transistors - FETs, MOSFETs - Single
- SSM6J507NU,LF Datasheet
- 6-WDFN Exposed Pad
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 4074
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SSM6J507NU,LF |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET P-CH 30V 10A 6UDFNB |
Package Cut Tape (CT) |
Series U-MOSVI |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 6-WDFN Exposed Pad |
Supplier Device Package 6-UDFNB (2x2) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1.25W (Ta) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 10A (Ta) |
Rds On (Max) @ Id, Vgs 20mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 20.4 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 15 V |
Vgs (Max) +20V, -25V |
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V |
Package_case 6-WDFN Exposed Pad |
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