SSM6J507NU,LF

Toshiba Semiconductor and Storage SSM6J507NU,LF

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  • SSM6J507NU,LF
  • Toshiba Semiconductor and Storage
  • MOSFET P-CH 30V 10A 6UDFNB
  • Transistors - FETs, MOSFETs - Single
  • SSM6J507NU,LF Datasheet
  • 6-WDFN Exposed Pad
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4074
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SSM6J507NU,LF
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET P-CH 30V 10A 6UDFNB
Package
Cut Tape (CT)
Series
U-MOSVI
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-WDFN Exposed Pad
Supplier Device Package
6-UDFNB (2x2)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1.25W (Ta)
FET Type
P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Rds On (Max) @ Id, Vgs
20mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
1150 pF @ 15 V
Vgs (Max)
+20V, -25V
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Package_case
6-WDFN Exposed Pad

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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