TK10E60W,S1VX

Toshiba Semiconductor and Storage TK10E60W,S1VX

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  • TK10E60W,S1VX
  • Toshiba Semiconductor and Storage
  • MOSFET N-CH 600V 9.7A TO220
  • Transistors - FETs, MOSFETs - Single
  • TK10E60W,S1VX Datasheet
  • TO-220-3
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 24415
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
TK10E60W,S1VX
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 600V 9.7A TO220
Package
Cut Tape (CT)
Series
DTMOSIV
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
100W (Tc)
FET Type
N-Channel
FET Feature
Super Junction
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9.7A (Ta)
Rds On (Max) @ Id, Vgs
380mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id
3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 300 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-220-3

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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