Toshiba Semiconductor and Storage TK35N65W,S1F
- TK35N65W,S1F
- Toshiba Semiconductor and Storage
- MOSFET N-CH 650V 35A TO247
- Transistors - FETs, MOSFETs - Single
- TK35N65W,S1F Datasheet
- TO-247-3
- Tube
- Lead free / RoHS Compliant
- 16096
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number TK35N65W,S1F |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N-CH 650V 35A TO247 |
Package Tube |
Series DTMOSIV |
Operating Temperature 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package TO-247 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 270W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 650 V |
Current - Continuous Drain (Id) @ 25°C 35A (Ta) |
Rds On (Max) @ Id, Vgs 80mOhm @ 17.5A, 10V |
Vgs(th) (Max) @ Id 3.5V @ 2.1mA |
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 300 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-247-3 |
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