Transphorm TP65H050WSQA
- TP65H050WSQA
- Transphorm
- GANFET N-CH 650V 36A TO247-3
- Transistors - FETs, MOSFETs - Single
- TP65H050WSQA Datasheet
- TO-247-3
- Tube
- Lead free / RoHS Compliant
- 15940
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number TP65H050WSQA |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Transphorm |
Description GANFET N-CH 650V 36A TO247-3 |
Package Tube |
Series Automotive, AEC-Q101 |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package TO-247-3 |
Technology GaNFET (Cascode Gallium Nitride FET) |
Power Dissipation (Max) 150W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 650 V |
Current - Continuous Drain (Id) @ 25°C 36A (Tc) |
Rds On (Max) @ Id, Vgs 60mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id 4.8V @ 700µA |
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 400 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-247-3 |
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