Diodes Incorporated ZXTN2005ZTA
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- ZXTN2005ZTA
- Diodes Incorporated
- TRANS NPN 25V 5.5A SOT89
- Transistors - Bipolar (BJT) - Single
- ZXTN2005ZTA Datasheet
- TO-243AA
- TO-243AA
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What is ZXTN2005ZTA
Diodes Incorporated Part Number ZXTN2005ZTA（Transistors - Bipolar (BJT) - Single）, developed and manufactured by Diodes Incorporated, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
ZXTN2005ZTA is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
ZXTN2005ZTA Specifications
- Part NumberZXTN2005ZTA
- CategoryTransistors - Bipolar (BJT) - Single
- ManufacturerDiodes Incorporated
- DescriptionTRANS NPN 25V 5.5A SOT89
- PackageTO-243AA
- Series-
- Operating Temperature-55°C ~ 150°C (TJ)
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Supplier Device PackageSOT-89-3
- Power - Max2.1W
- Transistor TypeNPN
- Current - Collector (Ic) (Max)5.5A
- Voltage - Collector Emitter Breakdown (Max)25V
- Vce Saturation (Max) @ Ib, Ic200mV @ 150mA, 6.5A
- Current - Collector Cutoff (Max)20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1A, 1V
- Frequency - Transition150MHz
Application of ZXTN2005ZTA
ZXTN2005ZTA Datasheet
ZXTN2005ZTA Datasheet , TO-243AA,-55°C ~ 150°C (TJ),Surface Mount,TO-243AA,SOT-89-3,2.1W,NPN,5.5A,25V,200mV @ 150mA, 6.5A,20nA (ICBO),300 @ 1A, 1V,150MHz
ZXTN2005ZTA Classification
Transistors - Bipolar (BJT) - Single
FAQ about Transistors - Bipolar (BJT) - Single
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1. What is a bipolar transistor?
A bipolar transistor, or bipolar junction transistor (BJT), is an electronic device with three terminals, consisting of three semiconductors with different doping levels. It was successfully developed by William Shockley, John Bardeen and Walter Brattain of Bell Labs in 1947, marking the birth of semiconductor device technology.
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2. Is BJT bipolar or unipolar?
BJT (bipolar junction transistor) is bipolar. BJT (bipolar junction transistor) is composed of two N-type semiconductors sandwiched between a P-type semiconductor, with an emitter junction formed between the emitter and the base, and a collector junction formed between the collector and the base. When the power is turned on, the majority carriers (electrons) in the emitter and the majority carriers (holes) in the base diffuse with each other, forming a current amplification effect.
The working principle of BJT is to achieve current amplification through the control of two PN junctions (emitter junction and collector junction). When the emitter junction is forward biased, electrons are injected from the emitter region into the base region; when the collector junction is reverse biased, electrons are injected from the base region into the collector region. Because the base region is very thin and the impurity content is strictly controlled, most electrons can enter the collector region through the collector junction to form the collector current Ic, and only a small number of electrons recombine with holes in the base region to form the base current Ib. Therefore, by controlling the base current Ib, the collector current Ic can be amplified to achieve current amplification. -
3. Is PNP transistor bipolar?
PNP transistor is a bipolar transistor. PNP transistor is a bipolar transistor used in electronic circuits to amplify, switch and control current. Its name "PNP" represents the three different semiconductor regions in its structure: two positive poles (P type) and one negative pole (N type).
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