Vishay Semiconductor - Diodes Division ES3B-M3/9AT
- ES3B-M3/9AT
- Vishay Semiconductor - Diodes Division
- DIODE GEN PURP 100V 3A DO214AB
- Diodes - Rectifiers - Single
- ES3B-M3/9AT Datasheet
- DO-214AB, SMC
- Tape & Reel (TR)
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What is ES3B-M3/9AT
Vishay Semiconductor - Diodes Division Part Number ES3B-M3/9AT(Diodes - Rectifiers - Single), developed and manufactured by Vishay Semiconductor - Diodes Division, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
ES3B-M3/9AT is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
ES3B-M3/9AT Specifications
- Part NumberES3B-M3/9AT
- CategoryDiodes - Rectifiers - Single
- ManufacturerVishay Semiconductor - Diodes Division
- DescriptionDIODE GEN PURP 100V 3A DO214AB
- PackageTape & Reel (TR)
- Series-
- Mounting TypeSurface Mount
- Package / CaseDO-214AB, SMC
- Supplier Device PackageDO-214AB (SMC)
- Diode TypeStandard
- Current - Average Rectified (Io)3A
- Voltage - Forward (Vf) (Max) @ If900 mV @ 3 A
- Current - Reverse Leakage @ Vr10 µA @ 100 V
- Capacitance @ Vr, F45pF @ 4V, 1MHz
- Voltage - DC Reverse (Vr) (Max)100 V
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)30 ns
- Operating Temperature - Junction-55°C ~ 150°C
Application of ES3B-M3/9AT
ES3B-M3/9AT Datasheet
ES3B-M3/9AT Datasheet , Tape & Reel (TR),Surface Mount,DO-214AB, SMC,DO-214AB (SMC),Standard,3A,900 mV @ 3 A,10 µA @ 100 V,45pF @ 4V, 1MHz,100 V,Fast Recovery =< 500ns, > 200mA (Io),30 ns,-55°C ~ 150°C
ES3B-M3/9AT Classification
Diodes - Rectifiers - Single
FAQ about Diodes - Rectifiers - Single
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1. What is the working principle of a single rectifier diode?
A rectifier diode conducts current when forward biased, converting the positive half wave of alternating current into direct current. When reverse biased, the diode blocks the current, thereby preventing the negative half wave from passing through and achieving rectification effect.
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2. How to choose the appropriate rectifier diode?
When making a choice, the following factors need to be considered:
Current capacity: Determine the maximum current that the diode needs to handle.
Reverse voltage: Ensure that the reverse voltage of the diode can withstand the highest voltage in the circuit.
Forward voltage drop: A lower forward voltage drop can improve circuit efficiency.
Recovery time: For high-frequency applications, choose fast recovery or Schottky diodes. -
3. What is forward voltage drop?
Forward voltage drop refers to the voltage drop generated when the current passes through a diode when it is conducting. The forward voltage drop of silicon rectifier diodes is usually around 0.7V, while the forward voltage drop of Schottky diodes is usually lower, between 0.2V and 0.3V.
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