NTE Electronics, Inc NTE284MP
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- NTE284MP
- NTE Electronics, Inc
- TRANS NPN 180V 16A TO3
- Transistors - Bipolar (BJT) - Single
- NTE284MP Datasheet
- TO-204AA, TO-3
- Bag
-
Lead free / RoHS Compliant - 4485
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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What is NTE284MP
NTE Electronics, Inc Part Number NTE284MP（Transistors - Bipolar (BJT) - Single）, developed and manufactured by NTE Electronics, Inc, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
NTE284MP is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
NTE284MP Specifications
- Part NumberNTE284MP
- CategoryTransistors - Bipolar (BJT) - Single
- ManufacturerNTE Electronics, Inc
- DescriptionTRANS NPN 180V 16A TO3
- PackageBag
- Series-
- Operating Temperature150°C (TJ)
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Supplier Device PackageTO-3
- Power - Max150 W
- Transistor TypeNPN
- Current - Collector (Ic) (Max)16 A
- Voltage - Collector Emitter Breakdown (Max)180 V
- Vce Saturation (Max) @ Ib, Ic3V @ 1A, 10A
- Current - Collector Cutoff (Max)100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 2A, 5V
- Frequency - Transition6MHz
Application of NTE284MP
NTE284MP Datasheet
NTE284MP Datasheet , Bag,150°C (TJ),Through Hole,TO-204AA, TO-3,TO-3,150 W,NPN,16 A,180 V,3V @ 1A, 10A,100µA (ICBO),70 @ 2A, 5V,6MHz
NTE284MP Classification
Transistors - Bipolar (BJT) - Single
FAQ about Transistors - Bipolar (BJT) - Single
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1. Is BJT bipolar or unipolar?
BJT (bipolar junction transistor) is bipolar. BJT (bipolar junction transistor) is composed of two N-type semiconductors sandwiched between a P-type semiconductor, with an emitter junction formed between the emitter and the base, and a collector junction formed between the collector and the base. When the power is turned on, the majority carriers (electrons) in the emitter and the majority carriers (holes) in the base diffuse with each other, forming a current amplification effect.
The working principle of BJT is to achieve current amplification through the control of two PN junctions (emitter junction and collector junction). When the emitter junction is forward biased, electrons are injected from the emitter region into the base region; when the collector junction is reverse biased, electrons are injected from the base region into the collector region. Because the base region is very thin and the impurity content is strictly controlled, most electrons can enter the collector region through the collector junction to form the collector current Ic, and only a small number of electrons recombine with holes in the base region to form the base current Ib. Therefore, by controlling the base current Ib, the collector current Ic can be amplified to achieve current amplification. -
2. Is PNP transistor bipolar?
PNP transistor is a bipolar transistor. PNP transistor is a bipolar transistor used in electronic circuits to amplify, switch and control current. Its name "PNP" represents the three different semiconductor regions in its structure: two positive poles (P type) and one negative pole (N type).
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3. Is BJT transistor a bipolar device?
BJT transistor is a bipolar junction transistor (Bipolar Junction Transistor, referred to as BJT), which is a bipolar device. BJT is composed of two PN junctions, divided into PNP and NPN types, and works through two PN junctions to achieve current amplification.
The working principle of BJT is to amplify the collector current by controlling the base current. When the base potential is higher than the emitter potential, the emitter junction is in a forward biased state, and the collector junction is in a reverse biased state. Since the majority carrier concentration in the emitter region is greater than that in the base region, most of the electrons injected into the base region pass over the collector junction and enter the collector region, forming a collector current, thereby achieving current amplification.
BJT is widely used in electronic circuits, such as amplifiers, switches, oscillators, etc., with amplification capabilities, linear amplification characteristics and high frequency response.
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