NTE Electronics, Inc NTE74
- NTE74
- NTE Electronics, Inc
- TRANS NPN 100V 7A TO59
- Transistors - Bipolar (BJT) - Single
- NTE74 Datasheet
- TO-210AA, TO-59-4, Stud
- Bag
-
Lead free / RoHS Compliant - 6560
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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What is NTE74
NTE Electronics, Inc Part Number NTE74(Transistors - Bipolar (BJT) - Single), developed and manufactured by NTE Electronics, Inc, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
NTE74 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
NTE74 Specifications
- Part NumberNTE74
- CategoryTransistors - Bipolar (BJT) - Single
- ManufacturerNTE Electronics, Inc
- DescriptionTRANS NPN 100V 7A TO59
- PackageBag
- Series-
- Operating Temperature-65°C ~ 200°C (TJ)
- Mounting TypeStud Mount
- Package / CaseTO-210AA, TO-59-4, Stud
- Supplier Device PackageTO-59
- Power - Max60 W
- Transistor TypeNPN
- Current - Collector (Ic) (Max)7 A
- Voltage - Collector Emitter Breakdown (Max)100 V
- Vce Saturation (Max) @ Ib, Ic1.2V @ 700mA, 7A
- Current - Collector Cutoff (Max)-
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 2A, 2V
- Frequency - Transition30MHz
Application of NTE74
NTE74 Datasheet
NTE74 Datasheet , Bag,-65°C ~ 200°C (TJ),Stud Mount,TO-210AA, TO-59-4, Stud,TO-59,60 W,NPN,7 A,100 V,1.2V @ 700mA, 7A,60 @ 2A, 2V,30MHz
NTE74 Classification
Transistors - Bipolar (BJT) - Single
FAQ about Transistors - Bipolar (BJT) - Single
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1. What is a bipolar transistor?
A bipolar transistor, or bipolar junction transistor (BJT), is an electronic device with three terminals, consisting of three semiconductors with different doping levels. It was successfully developed by William Shockley, John Bardeen and Walter Brattain of Bell Labs in 1947, marking the birth of semiconductor device technology.
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2. What is the difference between bipolar transistors and CMOS transistors?
The main differences between bipolar transistors and CMOS transistors are in working principles, structures, application scenarios, and power consumption.
Working principle
Bipolar transistor: Bipolar transistors have two types of carriers (holes and electrons) involved in conduction, and they are made of three parts of semiconductors with different doping levels. In bipolar transistors, the emitter emits free electrons, the collector receives holes, and the base controls the on and off of the current.
CMOS transistor: CMOS transistors have only one type of carrier (electrons or holes) involved in conduction, usually using a combination of P-type semiconductors and N-type semiconductors. In CMOS transistors, when the gate voltage is zero, the current does not flow. Only when the gate voltage reaches a certain value, the current will flow, which makes the CMOS transistor consume almost no power when static.
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3. Is PNP transistor bipolar?
PNP transistor is a bipolar transistor. PNP transistor is a bipolar transistor used in electronic circuits to amplify, switch and control current. Its name "PNP" represents the three different semiconductor regions in its structure: two positive poles (P type) and one negative pole (N type).
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