Toshiba Semiconductor and Storage TK7J90E,S1E
- TK7J90E,S1E
- Toshiba Semiconductor and Storage
- MOSFET N-CH 900V 7A TO3P
- Transistors - FETs, MOSFETs - Single
- TK7J90E,S1E Datasheet
- TO-3P-3, SC-65-3
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 14977
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number TK7J90E,S1E |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N-CH 900V 7A TO3P |
Package Tape & Reel (TR) |
Series π-MOSVIII |
Operating Temperature 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-3P-3, SC-65-3 |
Supplier Device Package TO-3P(N) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 200W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 900 V |
Current - Continuous Drain (Id) @ 25°C 7A (Ta) |
Rds On (Max) @ Id, Vgs 2Ohm @ 3.5A, 10V |
Vgs(th) (Max) @ Id 4V @ 700µA |
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-3P-3, SC-65-3 |
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