Transphorm TPH3212PS
- TPH3212PS
- Transphorm
- GANFET N-CH 650V 27A TO220AB
- Transistors - FETs, MOSFETs - Single
- TPH3212PS Datasheet
- TO-220-3
- Tube
- Lead free / RoHS Compliant
- 1801
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number TPH3212PS |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Transphorm |
Description GANFET N-CH 650V 27A TO220AB |
Package Tube |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package TO-220AB |
Technology GaNFET (Cascode Gallium Nitride FET) |
Power Dissipation (Max) 104W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 650 V |
Current - Continuous Drain (Id) @ 25°C 27A (Tc) |
Rds On (Max) @ Id, Vgs 72mOhm @ 17A, 8V |
Vgs(th) (Max) @ Id 2.6V @ 400uA |
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 8 V |
Input Capacitance (Ciss) (Max) @ Vds 1130 pF @ 400 V |
Vgs (Max) ±18V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 |
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