Vishay Siliconix IRF510STRRPBF
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- IRF510STRRPBF
- Vishay Siliconix
- MOSFET N-CH 100V 5.6A TO263
- Transistors - FETs, MOSFETs - Single
- IRF510STRRPBF Datasheet
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 19768
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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What is IRF510STRRPBF
Vishay Siliconix Part Number IRF510STRRPBF（Transistors - FETs, MOSFETs - Single）, developed and manufactured by Vishay Siliconix, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
IRF510STRRPBF is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
IRF510STRRPBF Specifications
- Part NumberIRF510STRRPBF
- CategoryTransistors - FETs, MOSFETs - Single
- ManufacturerVishay Siliconix
- DescriptionMOSFET N-CH 100V 5.6A TO263
- PackageCut Tape (CT)
- Series-
- Operating Temperature-55°C ~ 175°C (TJ)
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device PackageD²PAK (TO-263)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation (Max)3.7W (Ta), 43W (Tc)
- FET TypeN-Channel
- FET Feature-
- Drain to Source Voltage (Vdss)100 V
- Current - Continuous Drain (Id) @ 25°C5.6A (Tc)
- Rds On (Max) @ Id, Vgs540mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs8.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds180 pF @ 25 V
- Vgs (Max)±20V
- Drive Voltage (Max Rds On, Min Rds On)10V
Application of IRF510STRRPBF
IRF510STRRPBF Datasheet
IRF510STRRPBF Datasheet , Cut Tape (CT),-55°C ~ 175°C (TJ),Surface Mount,TO-263-3, D²Pak (2 Leads + Tab), TO-263AB,D²PAK (TO-263),MOSFET (Metal Oxide),3.7W (Ta), 43W (Tc),N-Channel,100 V,5.6A (Tc),540mOhm @ 3.4A, 10V,4V @
IRF510STRRPBF Classification
Transistors - FETs, MOSFETs - Single
FAQ about Transistors - FETs, MOSFETs - Single
-
1. What is the difference between a MOSFET and a transistor?
Transistors are usually bipolar (BJT) and rely on current control, while MOSFETs are voltage controlled.
BJTs have a higher input impedance, but MOSFETs usually have a higher input impedance.
MOSFETs are better suited for high-frequency operation because they switch faster. -
2. How to connect a MOSFET?
The source is usually connected to a lower potential (such as ground).
The drain is connected to the load or power supply.
The gate is connected to the control signal through an appropriate drive circuit.
Sometimes a small resistor is added between the gate and the source to prevent oscillation. -
3. How many watts per channel adcom mosfet 5300 amp？
The Adcom GFA-5300 is a high-power stereo amplifier that uses MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) technology. This amplifier is known for its robust power output and reliability.
The Adcom GFA-5300 amplifier is rated to deliver 200 watts per channel into 8 ohms, and it can provide 300 watts per channel into 4 ohms. These specifications are typical for this model, but always check the specific documentation or manual that came with your unit to confirm the exact specifications, as there might be slight variations depending on the production run or any updates to the design.
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